power transistors 1 publication date: september 2003 sjd00221bed parameter symbol conditions min typ max unit collector-emitter voltage 2SD1749 v ceo i c = 30 ma, i b = 060v (base open) 2SD1749a 80 base-emitter voltage v be v ce = 3 v, i c = 3 a 2.5 v collector-base cutoff 2sb1749 i cbo v cb = 60 v, i e = 0 200 a current (emitter open) 2sb1749a v cb = 80 v, i e = 0 200 collector-emitter cutoff 2sb1749 i ceo v ce = 30 v, i b = 0 500 a current (base open) 2sb1749a v ce = 40 v, i b = 0 500 emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 02ma forward current transfer ratio h fe1 v ce = 3 v, i c = 0.5 a 1 000 ? h fe2 * v ce = 3 v, i c = 3 a 2 000 10 000 collector-emitter saturation voltage v ce(sat) i c = 3 a, i b = 12 ma 2.0 v i c = 5 a, i b = 20 ma 4.0 forward current transfer ratio f t v ce = 10 v, i c = 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = 3 a, i b1 = 12 ma, i b2 = ? 12 ma 0.5 s storage time t stg v cc = 50 v 4.0 s fall time t f 1.0 s 2SD1749, 2SD1749a silicon npn triple diffusion planar type darlington for low-frequency power amplification complementary to 2sb1179 and 2sb1179a features ? high forward current transfer ratio h fe ? high-speed switching ? i type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c parameter symbol rating unit collector-base voltage 2SD1749 v cbo 60 v (emitter open) 2SD1749a 80 collector-emitter voltage 2SD1749 v ceo 60 v (base open) 2SD1749a 80 emitter-base voltage (collector open) v ebo 5v collector current i c 4a peak collector current i cp 8a collector power dissipation p c 15 w t a = 25 c 1.3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 7.0 0.3 3.5 0.2 0? to 0.15? 12.6 0.3 7.2 0.3 2.5 0.2 2.5 0.2 (1.0) (1.0) 1.0 0.2 3.0 0.2 2.0 0.2 1.1 0.1 0.75 0.1 0.9 0.1 0? to 0.15? 0.4 0.1 2.3 0.2 4.6 0.4 123 unit : mm b c e rank q p h fe2 2 000 to 5 000 4 000 to 10 000 note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification 1: base 2: collector 3: emitter i-g1 package note) self-supported type package is also prepared. internal connection
2SD1749, 2SD1749a 2 sjd00221bed v ce(sat) ? i c h fe ? i c c ob ? v cb p c ? t a i c ? v ce i c ? v be safe operation area r th ? t 0 0 160 40 120 80 5 15 10 20 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)without heat sink (p c =1.3w) (1) (2) 010 24 8 6 0 2 4 6 10 8 collector current i c (a) collector-emitter voltage v ce (v) i b =4.0ma t c =25?c 3.5ma 3.0ma 2.5ma 2.0ma 1.5ma 1.0ma 0.5ma 0 2 4 6 10 8 0 3.2 0.8 2.4 1.6 base-emitter voltage v be (v) collector current i c (a) v ce =3v t c =100?c ?5?c 25?c 0.01 0.01 0.1 1 10 100 0.1 1 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =250 t c =100?c 25?c ?5?c 0.01 0.1 1 10 10 10 2 10 3 10 4 10 5 forward current transfer ratio h fe collector current i c (a) v ce =3v 25?c ?5?c t c =100?c 0.1 1 10 100 1 10 10 2 10 3 10 4 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c 0.01 1 0.1 1 10 100 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c t=10ms t=300ms t=1ms 2SD1749 2SD1749a 10 ? 1 1 10 10 2 10 3 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) (1)without heat sink (2)with a 50 50 2mm al heat sink (1) (2)
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